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integration of III-V semiconductors (InP-based, GaAs-based) on silicon photonics. Key components that have been realized using this approach include single wavelength DFB lasers, widely tunable lasers, mode-locked lasers and high-power semiconductor optical amplifiers. In Fig. 3 high-power III-V- The InP modulator product line developed over the years at COGO has all the attributes to meet the market’s needs for next-generation 100 Gb/s and above transceiver development", said Alain-Jacques Simard, TeraXion president and CEO.

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